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 (R)
STPS1045B/H
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM VF (max) FEATURES AND BENEFITS
n n n n
10 A 45 V 0.57 V
K K
n
NEGLIGIBLE SWITCHING LOSSES LOW FORWARD DROP VOLTAGE LOW CAPACITANCE HIGH REVERSE AVALANCHE SURGE CAPABILITY AVALANCHE CAPABILITY SPECIFIED
K A
A A
K A
DESCRIPTION High voltage Schottky rectifier suited for Switch Mode Power Supplies and other Power Converters. Packaged in DPAK and IPAK, these devices are intended for use in high frequency circuitries where low switching losses are required. ABSOLUTE MAXIMUM RATINGS Symbol VRRM IF(RMS) / pin IF(AV) IFSM IRRM PARM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current / pin Average forward current Surge non repetitive forward current Repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum junction temperature Critical rate of rise of reverse voltage Tc = 150C d = 0.5 tp = 10 ms Sinusoidal tp = 2 s F = 1KHz tp = 1s Tj = 25C Value 45 7 10 75 1 4000 - 65 to + 175 175 10000 Unit V A A A A W C C V/s DPAK STPS1045B IPAK STPS1045H
July 2003 - Ed: 3B
1/5
STPS1045B/H
THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter Value 3 Unit C/W
STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF ** Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Pulse test : * tp = 380 s, < 2 % **tp = 5 ms, < 2%
Min.
Typ. 7
Max. 100 15 0.63 0.57 0.84 0.72
Unit A mA V
VR = 45 V IF = 10 A IF = 10 A IF = 20 A IF = 20 A 0.65 0.5
To evaluate the maximum conduction losses use the following equation : P = 0.42 x IF(AV) + 0.015 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current.
PF(av)(W) 8 7 6 5 4 3 2 1 0 0 1 2 3 4 IF(av) (A) 5 6 7 8 9
=tp/T
T
Fig. 2: Average forward current versus ambient temperature (=0.5).
IF(av)(A)
= 0.05
= 0.1
= 0.2
= 0.5
12
Rth(j-a)=Rth(j-c)
10
=1
8 6 4
T
Rth(j-a)=15C/W
Rth(j-a)=70C/W
2
tp
10
11
12
0
=tp/T
tp
Tamb(C) 50 75 100 125 150 175
0
25
Fig. 3: Normalized avalanche power derating versus pulse duration.
PARM(tp) PARM(1s)
1
Fig. 4: Normalized avalanche power derating versus junction temperature.
PARM(tp) PARM(25C)
1.2 1
0.1
0.8 0.6
0.01
0.4 0.2
0.001
0.01 0.1 1
tp(s)
10 100 1000
Tj(C)
0 0 25 50 75 100 125 150
2/5
STPS1045B/H
Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values).
IM(A) 120 100 80
Tc=50C
Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration.
Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2
= 0.5
60
Tc=100C
40
Tc=150C
= 0.2 = 0.1
T
20
IM t
0 1E-3
=0.5
t(s)
Single pulse
tp(s) 1E-2
1E-2
1E-1
1E+0
0.0 1E-4
=tp/T
tp
1E-3
1E-1
1E+0
Fig. 7: Reverse leakage current versus reverse voltage applied (typical values).
IR(A) 1E+5 1E+4 1E+3 1E+2 1E+1 1E+0 1E-1 0 5 10 15
Tj=150C
Fig. 8: Junction capacitance versus reverse voltage applied (typical values).
C(pF) 1000
F=1MHz Tj=25C
Tj=125C Tj=100C Tj=75C Tj=50C Tj=25C
500
200 VR(V)
30 35 40 45
VR(V) 20 25
100
1
2
5
10
20
50
Fig. 9: Forward voltage drop versus forward current (maximum values).
Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board, copper thickness: 35m) (STPS1045B).
Rth(j-a) (C/W) 100
IFM(A) 100.0
Tj=125C (Typical values)
80
10.0
Tj=125C
Tj=25C
60 40
1.0
20
VFM(V) 0.1 0.0
0
S(Cu) (cm)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
2
4
6
8
10
12
14
16
18
20
3/5
STPS1045B/H
PACKAGE MECHANICAL DATA IPAK DIMENSIONS REF.
A E B2 L2 C2
Millimeters Min. Typ. Max. Min. 2.4 1.1 1.3 0.9 5.4 0.85 0.3 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 10 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.086 0.035 0.027 0.025 0.204 2.2 0.9 0.7 0.64 5.2
Inches Typ. Max. 0.094 0.043 0.051 0.035 0.212 0.033 0.035 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.031 0.039 10
D
H L
L1
B6
B3 B V1 A1
B5 G
C A3
A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 V1
n
COOLING METHOD: BY CONDUCTION (C)
4/5
STPS1045B/H
PACKAGE MECHANICAL DATA DPAK DIMENSIONS REF. A A1 A2 B B2 C C2 D E G H L2 L4 V2 Millimeters Min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.80 0.60 0 1.00 0.023 8 0 Typ. Max 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 Min. 0.086 0.035 0.001 0.025 0.204 0.017 0.018 0.236 0.251 0.173 0.368 0.031 0.039 8 Inches Typ. Max. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.259 0.181 0.397
n
COOLING METHOD: BY CONDUCTION (C)
FOOT PRINT DIMENSIONS (in millimeters)
6.7
6.7
6.7 3 1.6 2.3 2.3 1.6
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States.
5/5


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